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AlN Template

AlN Single Crystal Substrate 2SP

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Description

AlN single crystal substrate  is a wide bandgap semiconductor material with exceptional characteristics.

Specifications

  • Orientation: [c-plane (0001 ± 1° ]
  • Dimension:  10x10 mm  , 5x5 mm  
  • thickness: 450 ± 50µm; 
  • Absorption coefficient: < 80 cm-1
  • Etch pit density (EPD):   < 1E5 cm-2
  • Usable area:   > 80 %
  • edge exclusion: 1.0 mm
  • Surface polish:  Al face : CMP polish (RMS < 0.8 nm), N face: optical polish (RMS < 3 nm)
  • XRD rocking curve (spot size 10 x 1 mm2):   FWHM (002): < 0.3°
                                                                    FWHM (102): < 0.5°
  • dislocation density              < 1E5 cm-2
  •                  

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