Crystal Grower By Vacuum Levitation Melting - EQ-SKJ-LCZ

 

MTI is designing and developing a special CZ crystal grower from vacuum levitation melting up to 2000ºC. The system includes a high-frequency induction heating supply,  high vacuum chamber, water cold copper crucible for levitation melting and precision pulling mechanism.    Levitation melting avoids the contamination of the sample from the crucible and may produce high purity crystal for metallic alloys Basic Specifications:

Structure of Grower	40KW RF Induction power source for levitation melting Special designed water-cooled copper crucible for 60 g max. metal melt levitation. Vacuum Chamber which can reach q10-6 torr by a turbopump system Precision pulling system with a rotary rod with speed 0.1 mm/h - 24 mm/h
RF Induction Power Source	Input power：  40KW Max. Frequency ：   80-200KHz Current：         10-100A Input Voltage:   200V +/-10% , Three-phase, 50/60Hz Water Cooling ：Pressure  ≧0.2MPa  Water flow:  ≧10L/min
Water Cold Copper Crucible	Crucible size:            ID 35mm,   Depth: 60mm Melting Capability:      60g  Max. Water flow requied：  58L/min
Pulling Mechanism	Pulling Speed:                       0.1-24mm/h  Pulling Rod Rotation Speed：  0.03-50r/min Pulling travel distance:        250 mm Faster travel:                        Manual operation  Optional:    Water cold pulling rod is available upon request at extra cost.
Vacuum Chamber & Vacuum Pump	Made of SS 304 with water cooling jacket Vacuum Chamber size: Φ400x 40 D mm Quartz Widow:              Φ300mm Two KF-25 port for gas inlet and outlet Vacuum Level:  10-6 Torr by turbopump Vacuum Pump: high-speed turbopump with 700L/S
Water Cooling	> 110 L/Minute at 30oC  recirculating water flow is required  The water chiller is not included.  please click picture left to order
Compliance	CE certified NRTL or CSA certification is available upon request at the extra cost Assembling and quality controlled in the USA
Warranty	One Year limited warranty and lifetime technical support
Demo Video	<111> Orientation NI alloy single crystal is grown in this device