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Enquriy

Round Al2O3- Sapphire Wafe, R Plane (1-102), 1SP

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Description

Fearures:

  • Monocrystalline Sapphire Wafer
  • Purity> =99.995%
  • Orientation: R-plane (1102) +/- 0.2 deg
  • Orientaion Flat: 31 +/- 2.5 mm
  • Primary Flat Location: Projected C-Axis 45 +/- 2 degree
  • Surface Roughness: Ra <= 3 Angstrom
  • One side polished
  • Edge Chamfering: Ground with 45 degree chamfering 
  • Back surface: 1 +/- 0.2 um (by lapping process)
  • Bow: <= 20um
  • Laser Mark: none
  • Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
  • Precaution: R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a care 

Typical Properties:

  • Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
  • Melting Point: 2040 degree C
  • Density: 3.97 gram/cm2 
  • Growth Technique: CZ
  • Crystal Purity:  >99.99%
  • Hardness: 9 ( mohs)
  • Thermal Expansion: 7.5x10-6 (oC)
  • Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) 
  • Dielectric Constant: ~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
  • Loss Tangent at 10 GHz: < 2x10-5  at A axis,  <5 x10-5  at C axis

   

Model Size
1SP - ALR100D046C1US 100mm dia x 0.46mm
1sp - ALR50D05C1 2" dia x 0.5mm
1SP - ALR76D05C1US 3" dia x 0.5mm

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