Round Al2O3- Sapphire Wafe, R Plane (1-102), 1SP

Fearures:

• Monocrystalline Sapphire Wafer
• Purity> =99.995%
• Orientation: R-plane (1102) +/- 0.2 deg
• Orientaion Flat: 31 +/- 2.5 mm
• Primary Flat Location: Projected C-Axis 45 +/- 2 degree
• Surface Roughness: Ra <= 3 Angstrom
• One side polished
• Edge Chamfering: Ground with 45 degree chamfering 
• Back surface: 1 +/- 0.2 um (by lapping process)
• Bow: <= 20um
• Laser Mark: none
• Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
• Precaution: R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a care 

Typical Properties:

• Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
• Melting Point: 2040 degree C
• Density: 3.97 gram/cm² 
• Growth Technique: CZ
• Crystal Purity:  >99.99%
• Hardness: 9 ( mohs)
• Thermal Expansion: 7.5x10^{-6 (}/ ^oC)
• Thermal Conductivity: 46.06 @ 0 ^oC, 25.12 @ 100 ^oC, 12.56 @ 400 ^oC ( W/(m.K) ) 
• Dielectric Constant: ~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
• Loss Tangent at 10 GHz: < 2x10^-5  at A axis,  <5 x10^-5  at C axis