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Round Al2O3- Sapphire Wafer, C-plane (0001) 1SP

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Description

Features:

  • Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films 
  • (0001) C plane orientation +/-0.5 Deg
  • Polished surface: One  side epi polished by special CMP technology
  • Surface roughness: Ra < 5 A ( by AFM)
  • Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container 

Typical Properties:

  • Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
  • Melting Point: 2040 degree C
  • Density: 3.97 gram/cm2 
  • Growth Technique: CZ
  • Crystal Purity:  >99.99%
  • Hardness: 9 ( mohs)
  • Thermal Expansion: 7.5x10-6 (oC)
  • Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) 
  • Dielectric Constant: ~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
  • Loss Tangent at 10 GHz: < 2x10-5  at A axis,  <5 x10-5  at C axis

   

Model Size
1SP - ALC25D05C1 1" Dia x0.5 mm
1SP - ALC50D043C1 2"dia x 0.43mm
1SP - ALC50D05C1 2"dia x 0.5mm
 1SP - ALC76D05C1US 3"Dia x0.5 mm
1sp - ALC100D05C1 4"Dia x 0.5mm
1sp - ALC100D09C1 100mm Dia. x 0.9mm
1sp - ALC100D065C1 100mm Dia. x 0.65mm 

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