Round Al2O3-Sapphire Wafer, M-plane (1-100) 1SP

Fearures:

• M plane -- <1-100> orientation sapphire wafer is being used  as a superconductor substrate due to less mis-matched lattice and stable chemical and physical properties. 
• (1-100) M plane orientation +/-0.5 Deg
• Polished surface: Wafer surface is EPI polished via a special CMP procedure. 
• One side polished
• Package:  Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container 

Typical Properties:

• Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
• Melting Point: 2040 degree C
• Density: 3.97 gram/cm² 
• Growth Technique: CZ
• Crystal Purity:  >99.99%
• Hardness: 9 ( mohs)
• Thermal Expansion: 7.5x10^{-6 (}/ ^oC)
• Thermal Conductivity: 46.06 @ 0 ^oC, 25.12 @ 100 ^oC, 12.56 @ 400 ^oC ( W/(m.K) ) 
• Dielectric Constant: ~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
• Loss Tangent at 10 GHz: < 2x10^-5  at A axis,  <5 x10^-5  at C axis