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Enquriy

Square Al2O3 Sapphire Wafer, C-plane (0001), 1 SP

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Description

Features:

  • Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties. 
  • Orientation tolerance:  +/-0.5 Deg.  C plane orientation 
  • Polished surface: substrate surface is EPI polished via a special CMP procedure with Ra < 5 A
  • 1 side polished 
  • Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
  • Precaution: R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a care

Typical Properties:

  • Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
  • Melting Point: 2040 degree C
  • Density: 3.97 gram/cm2 
  • Growth Technique: CZ
  • Crystal Purity:  >99.99%
  • Hardness: 9 ( mohs)
  • Thermal Expansion: 7.5x10-6 (oC)
  • Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) 
  • Dielectric Constant: ~ 9.4 @300K  at A axis ~ 11.58@ 300K at C axis
  • Loss Tangent at 10 GHz: < 2x10-5  at A axis,  <5 x10-5  at C axis

   

Model Size
1SP - ALC050505S1 5x5x0.5 mm
1SP - ALC101001S1 10x10x0.1 mm
1SP - ALC101005S1 10x10x0.5 mm
1SP - ALC101010S1 10x10x1mm
1SP - ALC060605S1 0.25"x0.25"x0.5mm
1SP - ALC100505S1 10x5x0.5mm
1SP - ALC121205S1 0.5"x0.5"x0.5mm
1SP - ALC251205S1 1"x0.5"x0.5mm
1SP- ALC121210S1 0.5"x0.5"x1.0mm
1SP - ALC252505S1 1" X1"x0.5 mm

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