TCVD-100A

• Size(mm): 1750(W) x 1585(H) x 750(D)
• Advanced Semi-Auto System
• Optimized for graphene, CNT growth
• Water-cooled end chambers and doors
• Process Temperature: ~1,100℃
• Uniformity of Film Thickness: ≤+-3%
• Testing Uniformity: ≤+-3%
• Movable furnace method is our unique knowhow for fast heating
• fast cooling of the sample
• Standard safety box

Specifications

1. hermal CVD Semi-auto Operation system
2. nd chambers (stainless steel) - water cooled system
3. as control unit ( Mass flow controller) - 3channel standard + 1 spare
4. 40liter/min Oil rotary pump
5. neumatic On/off valve with Down stream Auto pressure control Throttle valve with controller
6. rogrammable Temperature controller
7. igh Temperature Furnace(Max1200℃)
8. apid Cooling system by furnace moving
9. tmospheric and Vacuum Processing
10. nti-contamination system by inner tube
11. acuum gauge unit(Capacitance/Convectron)
12. year warranty
13. n-site install and training
14. afety Cover (Connected exhaust system)
15. afety interlock system(Water / Air)

Options

1. Max temp 1500℃ Furnace by SIC source

2. Rapid thermal processing furnace by IR lamp source

3. MF power induction heating process Max temp 1600℃

4. MFC(Mass flow controller) addition total 12channel

5. Dry vacuum pump ( Scroll / booster / industry)

6. Gas Safety interlock system for gas leak

7. RF plasma ( ICP type )

8. Tungsten filament gas source cracking

9. Additional Furnace for source evaporation

10. High Vacuum processing option (Pump/Gauge/valve unit)

11. Installation in Fume hood

12. Source delivery system ( Bubbler / Gas / Solid )

13. System Utility ( Chiller / scrubber / gas cabinet )

14. System Program ( Auto processing system)

Consumable Parts

1. K-type Thermocouple (Option : R-type)
2. Furnace heating element (Furnace repair)
3. Vacuum sensor
4. Oil in Rotary Oil Pump
5. O-ring
6. Quartz tube

Facility Requirements