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TCVD-D100CA
Description
Features
- Size (mm) : 2300(W) x 1770(H) x 750(D)
- Advanced Computer Controlled Automatic System
- Optimized for graphene, CNT, h-BN TMDC growth
- Water-cooled end chambers and doors
- Process Temperature: ~1,100 ℃
- Uniformity of Film Thickness : ≤+-3%
- Testing Uniformity : ≤+-3%
- Movable furnace method is our unique knowhow for fast heating fast cooling of the sample.
Specifications
- Thermal CVD Auto Operation system
- Both End chamber(Stainess) - All parts cooling by water
- Quartz Main chamber
- Gas control unit ( Mass flow controller) - 3channel standard
- 340liter/min Oil rotary pump
- Pneumatic On/off valve with Down stream Auto pressure control Throttle valve
with controller - Programmable Temperature controller
- High Temperature Furnace(Max1200℃)
- Rapid Cooling system by furnace moving
- Atmospheric and Vacuum Processing
- Anti-contamination system by inner tube
- Vacuum gauge unit(Capacitance/Convectron)
- 1 year warranty
- On-site install and training
- System Program ( Auto processing system)
- Furnace for source evaporation
- Safety interlock system(Water / Air)
Options
- Max temp 1500℃ Furnace by SIC source
- Rapid thermal processing furnace by IR lamp source
- MF power induction heating process Max temp 1600℃
- MFC(Mass flow controller) addition total 12channel
- Dry vacuum pump ( Scroll / booster / industry)
- Gas Safety interlock system for gas leak
- RF plasma ( ICP type )
- Tungsten filament gas source cracking
- High Vacuum processing option
(Pump/Gauge/valve unit) - Source delivery system ( Bubbler / Gas / Solid )
- System Utility ( Chiller / scrubber / gas cabinet )
Consumable Parts
K-type Thermocouple (Option : R-type)- Furnace heating element (Furnace repair)
- Vacuum sensor
- Oil in Rotary Oil Pump
- O-ring
- Quartz tube
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