TCVD-50B

• Size(mm): 1750(W) x 1585(H) x 750(D)
• Advanced Semi-Auto System
• Optimized for graphene, CNT growth
• Water-cooled end chambers and doors
• Process Temperature: ~1,100℃
• Uniformity of Film Thickness: ≤+-3%
• Testing Uniformity: ≤+-3%
• Movable furnace method is our unique knowhow for fast heating
• fast cooling of the sample
• Standard safety box

Specifications

1. Thermal CVD Semi-auto Operation system
2. End chambers (stainless steel) - water cooled system
3. Gas control unit ( Mass flow controller) - 3channel standard + 1 spare
4. 340liter/min Oil rotary pump
5. Pneumatic On/off valve with Down stream Auto pressure control Throttle valve with controller
6. Programmable Temperature controller
7. High Temperature Furnace(Max1200℃)
8. Rapid Cooling system by furnace moving
9. Atmospheric and Vacuum Processing
10. Anti-contamination system by inner tube
11. Vacuum gauge unit(Capacitance/Convectron)
12. 1 year warranty
13. On-site install and training
14. Safety Cover (Connected exhaust system)
15. Safety interlock system(Water / Air)

Options

1. Max temp 1500℃ Furnace by SIC source
2. Rapid thermal processing furnace by IR lamp source
3. MF power induction heating process Max temp 1600℃
4. MFC(Mass flow controller) addition total 12channel
5. Dry vacuum pump ( Scroll / booster / industry)
6. Gas Safety interlock system for gas leak
7. RF plasma ( ICP type )
8. Tungsten filament gas source cracking
9. Additional Furnace for source evaporation
10. High Vacuum processing option (Pump/Gauge/valve unit)
11. Installation in Fume hood
12. Source delivery system ( Bubbler / Gas / Solid )
13. System Utility ( Chiller / scrubber / gas cabinet )
14. System Program ( Auto processing system)

Consumable Parts

• K-type Thermocouple (Option : R-type)
• Furnace heating element (Furnace repair)
• Vacuum sensor
• Oil in Rotary Oil Pump
• O-ring
• Quartz tube

Facility Requirements