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Annealsys - MC200

The Annealsys MC200 is a 200 mm Metal Organic Chemical Vapor Deposition (MOCVD).  Capacitance plasma version is available.



  • Semiconductor: SiO2, HfO2, Ta2O5, Cu, TiN, TaN
  • High k Dielectric: SrTiO3, BaTiO3, Ba(1-x)SrxTiO3 (BST)
  • Ferroelectric: SBT, SBTN, PLZT, PZT,…
  • Superconductor: YBCO, Bi-2223, Bi-2212, Tl-1223, …
  • Piezoelectric: (Pb, Sr)(Zr,Ti)O3, Modified Lead Titanate
  • Colossal Magneto Resistance
  • Thermal coatings
  • Buffer layers
  • Etc…


  • The Annealsys MC200 is a 200 mm thermally controlled wall Chemical Vapor Deposition (CVD) reactor especially developed to meet the requirements of research and development units for Metal Organic Chemical Vapor Deposition (MOCVD) processes.
  • A capacitance plasma option offer PE-MOCVD capabilities for reducing the deposition temperature.
  • The direct injection vaporizer allows the widest range of utilization of precursor to develop new materials.
  • Loadlock and glove box interface are available as optional features


Performance & characteristics
  • Temperature range: RT to 850°C
  • Up to 4 vaporizers
  • Vacuum range: Atmosphere to 10-3 Torr


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