MC-200

Annealsys - MC200

The Annealsys MC200 is a 200 mm Metal Organic Chemical Vapor Deposition (MOCVD).  Capacitance plasma version is available.

• Semiconductor: SiO2, HfO2, Ta2O5, Cu, TiN, TaN
• High k Dielectric: SrTiO3, BaTiO3, Ba(1-x)SrxTiO3 (BST)
• Ferroelectric: SBT, SBTN, PLZT, PZT,…
• Superconductor: YBCO, Bi-2223, Bi-2212, Tl-1223, …
• Piezoelectric: (Pb, Sr)(Zr,Ti)O3, Modified Lead Titanate
• Colossal Magneto Resistance
• Thermal coatings
• Buffer layers
• Etc…
   

• The Annealsys MC200 is a 200 mm thermally controlled wall Chemical Vapor Deposition (CVD) reactor especially developed to meet the requirements of research and development units for Metal Organic Chemical Vapor Deposition (MOCVD) processes.
• A capacitance plasma option offer PE-MOCVD capabilities for reducing the deposition temperature.
• The direct injection vaporizer allows the widest range of utilization of precursor to develop new materials.
• Loadlock and glove box interface are available as optional features
   

• Temperature range: RT to 850°C
• Up to 4 vaporizers
• Vacuum range: Atmosphere to 10-3 Torr